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n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 5 6 k p f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l 3 0 v / 8 0 a , r d s ( o n ) = 3 . 3 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 4 . 5 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f k p a k n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c s g s s d d d d s g s s d d d d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , o r d e c k t o p c o m p u t e r . g s d d d d s s apm4356 handling code temp. range package code package code kp : kpak operating junction temp. range c : -55 to 150 c handling code tr : tape & reel tu : tube lead free code l : lead free device apm4356 kp : apm4356 xxxxx xxxxx - date code lead free code
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 2 a p m 4 3 5 6 k p a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 20 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forward current t c =25 c 50 a t c =25 c 180 i d p 300 s pulse drain current tested t c =100 c 90 a mounted on large heat sink t c =25 c 80 i d continuous drain current t c =100 c 45 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 2.5 c /w mounted on pcb of 1in 2 pad area t a = 25 c 20 i d continuous drain current t a = 100 c 12 a t a = 25 c 2.5 p d maximum power dissipation t a = 100 c 1 w r q ja thermal resistance - junction to ambient 50 c /w mounted on pcb of minimum footprint t a = 25 c 15 i d continuous drain current t a = 100 c 10 a t a = 25 c 1.5 p d maximum power dissipation t a = 100 c 0.5 w r q ja thermal resistance - junction to ambient 75 c /w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 3 a p m 4 3 5 6 k p e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4356kp symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 v v ds =2 4 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds =250 m a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds = 40 a 3.3 4 r ds(on) a drain - source on - state resistance v gs = 4. 5v,i ds = 20 a 4.5 5.8 m w diode characteristics v sd a diode forward voltage i sd = 20 a, v gs =0v 0.75 1.1 v t rr reverse recovery time 54 ns qrr reverse recovery charge i d s = 20 a, dl sd /dt = 100a/ m s 30 nc gate charge characteristics b q g total gate charge 100 140 q gs gate - source charge 11 q gd gate - drain charge v ds =1 5 v, v gs = 10 v, i d s = 40 a 20 nc dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v , f=1mhz 1.1 w c iss input capacitance 5860 c oss output capacitance 900 c rss reverse transfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz 680 pf t d(on) turn - on delay time 27 50 t r turn - on rise time 20 37 t d(off) turn - off delay time 128 231 t f turn - off fall time v dd =1 5 v, r l =1 5 w , i d s =1a, v gen = 10v , r g =6 w 58 105 ns note ?g a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subjec t to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 4 a p m 4 3 5 6 k p t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 t c =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 t c =25 o c,v g =10v 0.01 0.1 1 10 100 0.1 1 10 100 500 t c =25 o c 1ms 1s 10ms 100ms dc rds(on) limit
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 5 a p m 4 3 5 6 k p r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 i d =40a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 180 3.5v 4v 3v v gs = 4.5,5,6,7,8,9,10v 0 30 60 90 120 150 180 1 2 3 4 5 6 7 8 v gs =10v v gs =4.5v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 6 a p m 4 3 5 6 k p v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs = 10v i ds = 40a r on @t j =25 o c: 3.3m w 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 200 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 frequency=1mhz crss coss ciss 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 v ds = 15v i d = 40a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 7 a p m 4 3 5 6 k p a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10% dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus)
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 8 a p m 4 3 5 6 k p p a c k a g e i n f o r m a t i o n kpak s y m b o l min. max. 1.20 0.38 4.80 5.00 5.90 6.10 5.70 5.80 0.05 3.49 3.69 a b d e e1 e f f1 g h millimeters c 0.19 0.25 1.27 bsc kpak 0.35 0.45 min. max. inches 0.047 0.015 0.050 bsc 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.002 0.014 0.018 0.137 0.145 1.00 0.039 0.51 0.020 0.15 0.006 g1 k 1.60 0.063 0.05 0.15 0.002 0.006 0.018 0.014 0.45 0.35 e 1 e f 1 g 1 g k f h b e d c a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 9 a p m 4 3 5 6 k p c a r r i e r t a p e & r e e l d i m e n s i o n s d e v i c e s p e r r e e l package type devices per reel kpak 2500 application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 9.2 ? 0.10 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 kpak 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.05 1.5+0.10 1.5 min. 0.3 ? 0.05 6.5 ? 0.10 5.3 ? 0.10 1.4 ? 0.10 (mm) a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 h t1 a d
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 5 6 k p terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb, 100%sn ). lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p x (ir/convection or vpr reflow) profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package. measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - m a y , 2 0 0 7 w w w . a n p e c . c o m . t w 1 1 a p m 4 3 5 6 k p c u s t o m e r s e r v i c e a n p e c e l e c t r o n i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 t a i p e i b r a n c h : 7 f , n o . 1 3 7 , l a n e 2 3 5 , p a o c h i a o r d . , h s i n t i e n c i t y , t a i p e i h s i e n , t a i w a n , r . o . c . t e l : 8 8 6 - 2 - 8 9 1 9 1 3 6 8 f a x : 8 8 6 - 2 - 8 9 1 9 1 3 6 9 test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b,a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles esd mil - std - 883d - 3015.7 vhbm > 2kv, vmm > 200v latch - up jesd 78 10ms, 1 tr > 100ma r e l i a b i l i t y t e s t p r o g r a m table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* * tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . )

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